The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors

The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors

The role of ion track structure on high-injection carrier dynamics in a high-speed GaAs p + -n-n + sensor is investigated using laser and high-energy heavy ion microbeams. The results are compared to similar data collected on a Si p + -n-n + device where space charge screening effects (SCSE) result...

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Veröffentlicht in:IEEE transactions on nuclear science 2007-12, Vol.54 (6), p.2384-2393
Hauptverfasser: Laird, J.S., Onoda, S., Hirao, T., Edmonds, L., Ohshima, T.
Format: Artikel
Sprache:eng
Schlagworte:
Carriers
Dynamics
GaAs
Gallium arsenide
heavy ion
high frequency
High speed
high-injection effects
III-V
III-V semiconductor materials
ion track structure
Laser modes
Lasers
Optoelectronic and photonic sensors
Optoelectronics
Photodetectors
picosecond laser
Plasma density
Plasma devices
Plasma displays
Plasma properties
Sensors
Shape
Silicon
space-charge screening
transient current
ultrafast
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Beschreibung
Zusammenfassung:The role of ion track structure on high-injection carrier dynamics in a high-speed GaAs p + -n-n + sensor is investigated using laser and high-energy heavy ion microbeams. The results are compared to similar data collected on a Si p + -n-n + device where space charge screening effects (SCSE) result in transient shape being dependent on ion track structure. The results collected are discussed within the framework of the Edmonds charge collection model and generalized to III-V optoelectronic sensors.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2007.911421