Study of silicon carbide for X-ray detection and spectroscopy

Study of silicon carbide for X-ray detection and spectroscopy

This work presents an analysis of silicon carbide (SiC) as semiconductor for the realization of detectors for soft X-rays (

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Veröffentlicht in:IEEE transactions on nuclear science 2003-02, Vol.50 (1), p.175-185
Hauptverfasser: Bertuccio, G., Casiraghi, R.
Format: Artikel
Sprache:eng
Schlagworte:
Current density
Detectors
Electronics
Energy resolution
FETs
Prototypes
Semiconductor diodes
Semiconductors
Silicon
Silicon carbide
Spectroscopy
Temperature distribution
X-ray detection
X-ray detectors
X-rays
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Zusammenfassung:This work presents an analysis of silicon carbide (SiC) as semiconductor for the realization of detectors for soft X-rays (
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2003.807855