Proton radiation effects in 0.35 /spl mu/m partially depleted SOI MOSFETs fabricated on UNIBOND

We investigate the proton radiation tolerance of a 0.35 /spl mu/m SOI technology on UNIBOND material. The radiation response is characterized by threshold-voltage shifts of the front-gate and back-gate transistors. An increase of the front-gate threshold voltage is observed on the n-channel MOSFETs after irradiation and is attributed to radiation-induced interface states at the front-gate oxide/silicon interface. A double g/sub m/ peak behavior is observed on the back-gate g/sub m/-V/sub GS/ curves for both n- and p-channel MOSFETs and is attributed to silicon/back-gate oxide interface traps with a delta-function-like distribution in the energy gap. The results suggest this 0.35 /spl mu/m technology on UNIBOND material performs well in a proton-radiation environment.