Simplified Engineering Techniques for Predicting Diode Tree Responses

Simplified Engineering Techniques for Predicting Diode Tree Responses

The feasibility of predicting equilibrium photocurrents in silicon switching diodes entirely from nondestructively measured electrical parameters is shown. The prediction method is derived from the basic theoretical equation for diode photocurrent. Junction areas and depletion widths are related to...

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Veröffentlicht in:IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-13: No. 6, 105-8(Dec. 1966) Trans. Nucl. Sci., NS-13: No. 6, 105-8(Dec. 1966), 1966-12, Vol.13 (6), p.105-108
Hauptverfasser: Carr, E. A., Walker, K. R.
Format: Artikel
Sprache:eng
Schlagworte:
BREMSSTRAHLUNG
Capacitance
Capacitance-voltage characteristics
CAPACITORS
CURRENTS
DIFFUSION LENGTH
DIODES
ELECTRIC POTENTIAL
Electric variables measurement
Equations
IRRADIATION
N26500 -Instrumentation-Radiation Effects on Instruments & Instrument Components
Photoconductivity
Pulse measurements
RADIATION EFFECTS
SEMICONDUCTORS
SILICON
Voltage
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Beschreibung
Zusammenfassung:The feasibility of predicting equilibrium photocurrents in silicon switching diodes entirely from nondestructively measured electrical parameters is shown. The prediction method is derived from the basic theoretical equation for diode photocurrent. Junction areas and depletion widths are related to avalanche voltages and capacitance-voltage characteristics by a general solution to McKay's avalanche condition integral equation. Diffusion lengths are related to storage times. The feasibility of the prediction method is demonstrated by comparing predicted and measured values of equilibrium photocurrents in 46 test diodes.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1996.4324351