A (Ga,Al) as Semiconductor Scintillator with Monolithically Integrated Photodiode: A New Detector

A new type of a particle detector with a (Ga, Al) As-GaAs heterojunction is demonstrated. A liquid phase epitaxial (Ga, Al) As layer of up to 150 μm thickness with graded band gap acts as scintillator and the junction as photodiode with GaAs as absorbing layer. The device can be operated without bia...

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Veröffentlicht in:	IEEE Trans. Nucl. Sci.; (United States) 1983-02, Vol.30 (1), p.436-439
Hauptverfasser:	Ruhle, W. W., Glasow, P. A., Schwarzmichel, K. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	440101 - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments Absorption ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES Buffer layers Gallium arsenide GALLIUM ARSENIDES GALLIUM COMPOUNDS Heterojunctions Infrared detectors INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY Luminescence MEASURING INSTRUMENTS PARTICLES PHOTODIODES Photonic band gap PNICTIDES RADIATION DETECTORS SCINTILLATION COUNTERS SEMICONDUCTOR DETECTORS SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES SPECTRA
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Beschreibung
Zusammenfassung:	A new type of a particle detector with a (Ga, Al) As-GaAs heterojunction is demonstrated. A liquid phase epitaxial (Ga, Al) As layer of up to 150 μm thickness with graded band gap acts as scintillator and the junction as photodiode with GaAs as absorbing layer. The device can be operated without bias. Particle spectra are presented and the position dependent net e,h pair creation energy is discussed.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.1983.4332306