Temperature Effects on Failure and Annealing Behavior in Dynamic Random Access Memories

Temperature Effects on Failure and Annealing Behavior in Dynamic Random Access Memories

Total dose failure levels and long time anneal characteristics of dynamic random access memories are measured while the devices are exercised under actual use conditions. These measurements were performed over the temperature range of -60 C to +70 C. The total dose failure levels are shown to decrea...

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Veröffentlicht in:IEEE Trans. Nucl. Sci.; (United States) 1982-12, Vol.29 (6), p.1669-1673
Hauptverfasser: Wilkin, Neil D., Self, Charles T.
Format: Artikel
Sprache:eng
Schlagworte:
420800 - Engineering- Electronic Circuits & Devices- (-1989)
440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems
ANNEALING
DOSES
DRAM chips
ENGINEERING
FAILURES
Heat transfer
HEAT TREATMENTS
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Instruments
IRRADIATION
Large scale integration
MEMORY DEVICES
RADIATION EFFECTS
Temperature control
Temperature distribution
TEMPERATURE EFFECTS
Temperature measurement
TESTING
Time measurement
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Beschreibung
Zusammenfassung:Total dose failure levels and long time anneal characteristics of dynamic random access memories are measured while the devices are exercised under actual use conditions. These measurements were performed over the temperature range of -60 C to +70 C. The total dose failure levels are shown to decrease with increasing temperature. The anneal characteristics are shown to result in both an increase and decrease in the measured number of errors as a function of time. Finaly a description of the test instrumentation and irradiation procedures are given.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1982.4336425