A Radiation-Hard Silicon Gate Bulk CMOS Cell Family

A Radiation-Hard Silicon Gate Bulk CMOS Cell Family

A radiation-hardened silicon gate CMOS two-port standard cell family utilizing a linear array layout topology with six to seven micron design rules and guardbanded n-channel devices has been developed. The process, structure, performance, and applications of this Expanded Linear Array (ELA) technolo...

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Veröffentlicht in:IEEE transactions on nuclear science 1980-01, Vol.27 (6), p.1712-1715
Hauptverfasser: Gibbon, Charles F., Habing, Donald H., Flores, Richard S.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
CMOS technology
Etching
Implants
Integrated circuit interconnections
Laboratories
Routing
Silicon
Standards development
Threshold voltage
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Zusammenfassung:A radiation-hardened silicon gate CMOS two-port standard cell family utilizing a linear array layout topology with six to seven micron design rules and guardbanded n-channel devices has been developed. The process, structure, performance, and applications of this Expanded Linear Array (ELA) technology are described.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1980.4331093