Extensions of Models for Transistor Failure Probability Due to Neutron Fluence

Extensions of Models for Transistor Failure Probability Due to Neutron Fluence

Models developed in the Hardening Options for Neutron Effects (HONE) program for predicting transistor failure probability are extended to include probability distributions for the initial current gains and to allow non-zero origins for all random variables concerned. Further, these models are gener...

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Veröffentlicht in:IEEE transactions on nuclear science 1977-01, Vol.24 (6), p.2365-2370
Hauptverfasser: Michalowicz, Joseph V., Ausman, George A.
Format: Artikel
Sprache:eng
Schlagworte:
Bipolar transistors
Circuit optimization
Data models
Monte Carlo methods
Neutrons
Performance analysis
Predictive models
Probability distribution
Random variables
Testing
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Zusammenfassung:Models developed in the Hardening Options for Neutron Effects (HONE) program for predicting transistor failure probability are extended to include probability distributions for the initial current gains and to allow non-zero origins for all random variables concerned. Further, these models are generalized to consider two-transistor combinations. Test cases are calculated to compare the failure probability curves generated by these models with previous results.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1977.4329223