Gamma and vacuum ultraviolet irradiations of ion implanted SiO 2 for MOS dielectrics
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Veröffentlicht in: | IEEE transactions on nuclear science 1974-12, Vol.21 (6), p.159-166 |
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container_issue | 6 |
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container_title | IEEE transactions on nuclear science |
container_volume | 21 |
creator | Emms, C. G. Holmes-Siedle, A. G. Groombridge, I. Thomson, J. J. Bosnell, J. R. |
description | |
doi_str_mv | 10.1109/TNS.1974.6498922 |
format | Article |
fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TNS_1974_6498922</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1109_TNS_1974_6498922</sourcerecordid><originalsourceid>FETCH-LOGICAL-c882-a05bd78b51c5c8348ff77244bf2085985fa8b6dfac6e62b8b069b09d87e4a04e3</originalsourceid><addsrcrecordid>eNot0L1OwzAUhmELgUQo7Iy-gRTbsZPjEVVQkAodkj06_pOM8lPZaSXunlZ0evUt3_AQ8szZmnOmX7rvds11I9e11KCFuCEFVwpKrhq4JQVjHEottb4nDzn_nKdUTBWk2-I4IsXJ0RPa43Gkx2FJeIrz4BcaU0IXcYnzlOkc6Lk0jocBp8U72sY9FTTMiX7tW-qiH7xdUrT5kdwFHLJ_unZFuve3bvNR7vbbz83rrrQAokSmjGvAKG6VhUpCCE0jpDRBMFAaVEAwtQtoa18LA4bV2jDtoPESmfTVirD_W5vmnJMP_SHFEdNvz1l_QenPKP0Fpb-iVH8TBVWA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Gamma and vacuum ultraviolet irradiations of ion implanted SiO 2 for MOS dielectrics</title><source>IEEE Electronic Library (IEL)</source><creator>Emms, C. G. ; Holmes-Siedle, A. G. ; Groombridge, I. ; Thomson, J. J. ; Bosnell, J. R.</creator><creatorcontrib>Emms, C. G. ; Holmes-Siedle, A. G. ; Groombridge, I. ; Thomson, J. J. ; Bosnell, J. R.</creatorcontrib><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.1974.6498922</identifier><language>eng</language><ispartof>IEEE transactions on nuclear science, 1974-12, Vol.21 (6), p.159-166</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c882-a05bd78b51c5c8348ff77244bf2085985fa8b6dfac6e62b8b069b09d87e4a04e3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Emms, C. G.</creatorcontrib><creatorcontrib>Holmes-Siedle, A. G.</creatorcontrib><creatorcontrib>Groombridge, I.</creatorcontrib><creatorcontrib>Thomson, J. J.</creatorcontrib><creatorcontrib>Bosnell, J. R.</creatorcontrib><title>Gamma and vacuum ultraviolet irradiations of ion implanted SiO 2 for MOS dielectrics</title><title>IEEE transactions on nuclear science</title><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1974</creationdate><recordtype>article</recordtype><recordid>eNot0L1OwzAUhmELgUQo7Iy-gRTbsZPjEVVQkAodkj06_pOM8lPZaSXunlZ0evUt3_AQ8szZmnOmX7rvds11I9e11KCFuCEFVwpKrhq4JQVjHEottb4nDzn_nKdUTBWk2-I4IsXJ0RPa43Gkx2FJeIrz4BcaU0IXcYnzlOkc6Lk0jocBp8U72sY9FTTMiX7tW-qiH7xdUrT5kdwFHLJ_unZFuve3bvNR7vbbz83rrrQAokSmjGvAKG6VhUpCCE0jpDRBMFAaVEAwtQtoa18LA4bV2jDtoPESmfTVirD_W5vmnJMP_SHFEdNvz1l_QenPKP0Fpb-iVH8TBVWA</recordid><startdate>197412</startdate><enddate>197412</enddate><creator>Emms, C. G.</creator><creator>Holmes-Siedle, A. G.</creator><creator>Groombridge, I.</creator><creator>Thomson, J. J.</creator><creator>Bosnell, J. R.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>197412</creationdate><title>Gamma and vacuum ultraviolet irradiations of ion implanted SiO 2 for MOS dielectrics</title><author>Emms, C. G. ; Holmes-Siedle, A. G. ; Groombridge, I. ; Thomson, J. J. ; Bosnell, J. R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c882-a05bd78b51c5c8348ff77244bf2085985fa8b6dfac6e62b8b069b09d87e4a04e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1974</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Emms, C. G.</creatorcontrib><creatorcontrib>Holmes-Siedle, A. G.</creatorcontrib><creatorcontrib>Groombridge, I.</creatorcontrib><creatorcontrib>Thomson, J. J.</creatorcontrib><creatorcontrib>Bosnell, J. R.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Emms, C. G.</au><au>Holmes-Siedle, A. G.</au><au>Groombridge, I.</au><au>Thomson, J. J.</au><au>Bosnell, J. R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gamma and vacuum ultraviolet irradiations of ion implanted SiO 2 for MOS dielectrics</atitle><jtitle>IEEE transactions on nuclear science</jtitle><date>1974-12</date><risdate>1974</risdate><volume>21</volume><issue>6</issue><spage>159</spage><epage>166</epage><pages>159-166</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><doi>10.1109/TNS.1974.6498922</doi><tpages>8</tpages></addata></record> |
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identifier | ISSN: 0018-9499 |
ispartof | IEEE transactions on nuclear science, 1974-12, Vol.21 (6), p.159-166 |
issn | 0018-9499 1558-1578 |
language | eng |
recordid | cdi_crossref_primary_10_1109_TNS_1974_6498922 |
source | IEEE Electronic Library (IEL) |
title | Gamma and vacuum ultraviolet irradiations of ion implanted SiO 2 for MOS dielectrics |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T15%3A24%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Gamma%20and%20vacuum%20ultraviolet%20irradiations%20of%20ion%20implanted%20SiO%202%20for%20MOS%20dielectrics&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Emms,%20C.%20G.&rft.date=1974-12&rft.volume=21&rft.issue=6&rft.spage=159&rft.epage=166&rft.pages=159-166&rft.issn=0018-9499&rft.eissn=1558-1578&rft_id=info:doi/10.1109/TNS.1974.6498922&rft_dat=%3Ccrossref%3E10_1109_TNS_1974_6498922%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |