Radiotracer Measurements of Sputtered Contamination Incurred during Ion Implantation Processing

Radiotracer Measurements of Sputtered Contamination Incurred during Ion Implantation Processing

Radioactive tracer measurements have been performed in order to establish limits for the degree of sputtered contamination to be expected during implantation processing in stainless steel target chambers. The information collected provides a useful set of working curves for the particular wafer-hold...

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Veröffentlicht in:IEEE transactions on nuclear science 1973-01, Vol.20 (3), p.1032-1034
1. Verfasser: Masters, B. J.
Format: Artikel
Sprache:eng
Schlagworte:
Contamination
Geometry
Impurities
Ion beams
Ion implantation
Pollution measurement
Radioactive materials
Silicon
Sputtering
Steel
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Zusammenfassung:Radioactive tracer measurements have been performed in order to establish limits for the degree of sputtered contamination to be expected during implantation processing in stainless steel target chambers. The information collected provides a useful set of working curves for the particular wafer-holding arrangement employed, and is presented in a form that should be convenient for use in the design of other stainless steel target-holder geometries.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1973.4327318