Noise from Neutron Induced Defects in Junction Field Effect Transistors

Noise from Neutron Induced Defects in Junction Field Effect Transistors

Neutron damage centers in the depletion region between the gates and channel of a JFET fluctuate in charge and modulate the drain current. Thus, they create noise. The noise from 1012 14.8 MeV neutrons/cm2 is easily measured. Temperature dependence of leakage current indicates a neutron damage gener...

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Veröffentlicht in:IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-17: No. 6, 256-61(Dec 1970) Trans. Nucl. Sci. NS-17: No. 6, 256-61(Dec 1970), 1970-01, Vol.17 (6), p.256-261
Hauptverfasser: Kern, H. E., McKenzie, J. M.
Format: Artikel
Sprache:eng
Schlagworte:
Charge carrier processes
CURRENTS
Electron traps
FETs
FIELD EFFECT TRANSISTORS
Leakage current
Low-frequency noise
Low-noise amplifiers
N26500 -Instrumentation-Radiation Effects on Instruments & Instrument Components
NEUTRONS
NEUTRONS/effects on junction field effect transistors
NOISE
RADIATION EFFECTS
Resistors
Silicon
Thermal resistance
TRANSISTORS/radioinduced noise in junction FET, neutron
TRAPS
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Beschreibung
Zusammenfassung:Neutron damage centers in the depletion region between the gates and channel of a JFET fluctuate in charge and modulate the drain current. Thus, they create noise. The noise from 1012 14.8 MeV neutrons/cm2 is easily measured. Temperature dependence of leakage current indicates a neutron damage generation-recombination level effective at about Ec - 0.5 eV. The noise spectral distribution cannot be adequately characterized by a two state trap with single characteristic lifetimes for the two states.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1970.4325802