Radiation-Induced Second Breakdown in Transistors

Radiation-Induced Second Breakdown in Transistors

Second breakdown was induced in the 2N914 transistor by electron pulses from a 10 MeV Linac. The typical time delay for the initiation of breakdown was observed as well as the reduction in time delay with increasing voltage. In addition, a transistor subject to a non-limited breakdown was observed t...

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Veröffentlicht in:IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-16: No. 6, 120-3(Dec 1969) Trans. Nucl. Sci. NS-16: No. 6, 120-3(Dec 1969), 1969-01, Vol.16 (6), p.120-123
Hauptverfasser: Carr, E. A., Binder, D.
Format: Artikel
Sprache:eng
Schlagworte:
Breakdown voltage
Cables
Circuits
Delay effects
Electric breakdown
Electrons
Ionizing radiation
Linear particle accelerator
N26500 -Instrumentation-Radiation Effects on Instruments & Instrument Components
Photoconductivity
RADIATION EFFECTS
Threshold voltage
TRANSISTORS
TRANSISTORS/radioinduced second breakdown in
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Zusammenfassung:Second breakdown was induced in the 2N914 transistor by electron pulses from a 10 MeV Linac. The typical time delay for the initiation of breakdown was observed as well as the reduction in time delay with increasing voltage. In addition, a transistor subject to a non-limited breakdown was observed to fail by a collector-to-emitter short. Threshold voltages for second breakdown were observed to decrease with increasing dose rate ir the BV and BV modes. At 1 or 2 × 1010 rad(Si)/sec the voltage decreased below the rated (BVCEO) voltage of the 2N914 transistor.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1969.4325514