Fluctuations of Energy Loss in Semiconductor Detectors

Fluctuations of Energy Loss in Semiconductor Detectors

Significant fluctuations and broadening of the energy-loss spectrum are expected in certain cases of passage of charged particles through "thin" detectors. Experimental measurements of this phenomenon (by use of lithium-drifted silicon detectors) are in good agreement with the rigorous the...

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Veröffentlicht in:IEEE transactions on nuclear science 1966, Vol.13 (3), p.176-179
Hauptverfasser: Maccabee, Howard D., Raju, Mudundi R., Tobias, Cornelius A.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic measurements
Electrons
Energy exchange
Energy loss
Energy measurement
Fluctuations
Radiation detectors
Semiconductor radiation detectors
Shape measurement
Silicon
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Beschreibung
Zusammenfassung:Significant fluctuations and broadening of the energy-loss spectrum are expected in certain cases of passage of charged particles through "thin" detectors. Experimental measurements of this phenomenon (by use of lithium-drifted silicon detectors) are in good agreement with the rigorous theory of Vavilov, as tabulated by Seltzer and Berger.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1966.4324096