Determination of Transient Response of Semiconductor Detectors by Use of a Nanosecond-Pulse Electron Accelerator
An apparatus previously developed and used for determination of scintillator response characteristics has been used for similar studies of the transient response of semiconductor nuclear detectors. With this apparatus a detector pulse as short as 1.2 nsec has been observed. Pulses have been recorded...
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| Veröffentlicht in: | IEEE (Inst. Elec. Electron. Engrs.), Trans. Nucl. Sci Trans. Nucl. Sci, 1964-01, Vol.11 (3), p.271-275 |
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| container_end_page | 275 |
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| container_issue | 3 |
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| container_title | IEEE (Inst. Elec. Electron. Engrs.), Trans. Nucl. Sci |
| container_volume | 11 |
| creator | Mann, Harry M. Sherman, Irvin S. |
| description | An apparatus previously developed and used for determination of scintillator response characteristics has been used for similar studies of the transient response of semiconductor nuclear detectors. With this apparatus a detector pulse as short as 1.2 nsec has been observed. Pulses have been recorded for diffused junction and lithium-drift diodes, in silicon. The effects of depletion-depth, base resistance and electric filed intensity in the depletion region are revealed in the shape of the pulse. The experimental method and the application of the apparatus to measurement of detector properties is discussed. |
| doi_str_mv | 10.1109/TNS.1964.4323433 |
| format | Article |
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With this apparatus a detector pulse as short as 1.2 nsec has been observed. Pulses have been recorded for diffused junction and lithium-drift diodes, in silicon. The effects of depletion-depth, base resistance and electric filed intensity in the depletion region are revealed in the shape of the pulse. The experimental method and the application of the apparatus to measurement of detector properties is discussed.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.1964.4323433</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>IEEE</publisher><subject>Acceleration ; ACCELERATORS ; CRYSTAL COUNTERS ; DIFFUSION ; ELECTRIC CONDUCTIVITY ; ELECTRIC FIELDS ; Electron accelerators ; ELECTRON BEAMS ; INSTRUMENTATION ; LITHIUM ; MEASURED VALUES ; Pulse shaping methods ; PULSES ; QUANTITATIVE ANALYSIS ; RADIATION DETECTORS ; Semiconductor diodes ; Semiconductor radiation detectors ; SEMICONDUCTORS ; SENSITIVITY ; Shape ; SILICON ; Transient response ; TRANSIENTS ; USES</subject><ispartof>IEEE (Inst. Elec. Electron. Engrs.), Trans. Nucl. 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The experimental method and the application of the apparatus to measurement of detector properties is discussed.</description><subject>Acceleration</subject><subject>ACCELERATORS</subject><subject>CRYSTAL COUNTERS</subject><subject>DIFFUSION</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRIC FIELDS</subject><subject>Electron accelerators</subject><subject>ELECTRON BEAMS</subject><subject>INSTRUMENTATION</subject><subject>LITHIUM</subject><subject>MEASURED VALUES</subject><subject>Pulse shaping methods</subject><subject>PULSES</subject><subject>QUANTITATIVE ANALYSIS</subject><subject>RADIATION DETECTORS</subject><subject>Semiconductor diodes</subject><subject>Semiconductor radiation detectors</subject><subject>SEMICONDUCTORS</subject><subject>SENSITIVITY</subject><subject>Shape</subject><subject>SILICON</subject><subject>Transient response</subject><subject>TRANSIENTS</subject><subject>USES</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1964</creationdate><recordtype>article</recordtype><recordid>eNo9kN1LwzAUxYMoOKfvgi_F99abNmmbxzHnB4wpbnsOaXqLkS0ZSfew_96UTp_u1-9cDoeQewoZpSCeNqt1RkXJMlbkBSuKCzKhnNcp5VV9SSYAtE4FE-Ka3ITwE0fGgU_I4Rl79HtjVW-cTVyXbLyywaDtky8MB2cDDts17o12tj3q3vlkEA1NSJpTsh0JlayUdQEHKv087uJ2sYuUj29nWuMOvYqSW3LVqXi8O9cp2b4sNvO3dPnx-j6fLVOdC-hTqjnjyGkp8rKuihpoTquKdY3gmnVVWTfQdjx2VasBStZCwxqR646VqJlixZQ8jn9d6I0M2kTH39GbjZYkA17nBUQIRkh7F4LHTh682St_khTkEKuMscohVnmONUoeRolBxH_87_oLMU90TQ</recordid><startdate>19640101</startdate><enddate>19640101</enddate><creator>Mann, Harry M.</creator><creator>Sherman, Irvin S.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19640101</creationdate><title>Determination of Transient Response of Semiconductor Detectors by Use of a Nanosecond-Pulse Electron Accelerator</title><author>Mann, Harry M. ; Sherman, Irvin S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c290t-1c545e51692687380121774fb95c4f768b0df54f77dc0064d0b4b92cf46ec4a43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1964</creationdate><topic>Acceleration</topic><topic>ACCELERATORS</topic><topic>CRYSTAL COUNTERS</topic><topic>DIFFUSION</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRIC FIELDS</topic><topic>Electron accelerators</topic><topic>ELECTRON BEAMS</topic><topic>INSTRUMENTATION</topic><topic>LITHIUM</topic><topic>MEASURED VALUES</topic><topic>Pulse shaping methods</topic><topic>PULSES</topic><topic>QUANTITATIVE ANALYSIS</topic><topic>RADIATION DETECTORS</topic><topic>Semiconductor diodes</topic><topic>Semiconductor radiation detectors</topic><topic>SEMICONDUCTORS</topic><topic>SENSITIVITY</topic><topic>Shape</topic><topic>SILICON</topic><topic>Transient response</topic><topic>TRANSIENTS</topic><topic>USES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mann, Harry M.</creatorcontrib><creatorcontrib>Sherman, Irvin S.</creatorcontrib><creatorcontrib>Argonne National Lab., Ill</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>IEEE (Inst. Elec. Electron. Engrs.), Trans. Nucl. Sci</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mann, Harry M.</au><au>Sherman, Irvin S.</au><aucorp>Argonne National Lab., Ill</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of Transient Response of Semiconductor Detectors by Use of a Nanosecond-Pulse Electron Accelerator</atitle><jtitle>IEEE (Inst. Elec. Electron. Engrs.), Trans. Nucl. Sci</jtitle><stitle>TNS</stitle><date>1964-01-01</date><risdate>1964</risdate><volume>11</volume><issue>3</issue><spage>271</spage><epage>275</epage><pages>271-275</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>An apparatus previously developed and used for determination of scintillator response characteristics has been used for similar studies of the transient response of semiconductor nuclear detectors. With this apparatus a detector pulse as short as 1.2 nsec has been observed. Pulses have been recorded for diffused junction and lithium-drift diodes, in silicon. The effects of depletion-depth, base resistance and electric filed intensity in the depletion region are revealed in the shape of the pulse. The experimental method and the application of the apparatus to measurement of detector properties is discussed.</abstract><pub>IEEE</pub><doi>10.1109/TNS.1964.4323433</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE (Inst. Elec. Electron. Engrs.), Trans. Nucl. Sci, 1964-01, Vol.11 (3), p.271-275 |
| issn | 0018-9499 1558-1578 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Acceleration ACCELERATORS CRYSTAL COUNTERS DIFFUSION ELECTRIC CONDUCTIVITY ELECTRIC FIELDS Electron accelerators ELECTRON BEAMS INSTRUMENTATION LITHIUM MEASURED VALUES Pulse shaping methods PULSES QUANTITATIVE ANALYSIS RADIATION DETECTORS Semiconductor diodes Semiconductor radiation detectors SEMICONDUCTORS SENSITIVITY Shape SILICON Transient response TRANSIENTS USES |
| title | Determination of Transient Response of Semiconductor Detectors by Use of a Nanosecond-Pulse Electron Accelerator |
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