Determination of Transient Response of Semiconductor Detectors by Use of a Nanosecond-Pulse Electron Accelerator

Determination of Transient Response of Semiconductor Detectors by Use of a Nanosecond-Pulse Electron Accelerator

An apparatus previously developed and used for determination of scintillator response characteristics has been used for similar studies of the transient response of semiconductor nuclear detectors. With this apparatus a detector pulse as short as 1.2 nsec has been observed. Pulses have been recorded...

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Veröffentlicht in:IEEE (Inst. Elec. Electron. Engrs.), Trans. Nucl. Sci Trans. Nucl. Sci, 1964-01, Vol.11 (3), p.271-275
Hauptverfasser: Mann, Harry M., Sherman, Irvin S.
Format: Artikel
Sprache:eng
Schlagworte:
Acceleration
ACCELERATORS
CRYSTAL COUNTERS
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
Electron accelerators
ELECTRON BEAMS
INSTRUMENTATION
LITHIUM
MEASURED VALUES
Pulse shaping methods
PULSES
QUANTITATIVE ANALYSIS
RADIATION DETECTORS
Semiconductor diodes
Semiconductor radiation detectors
SEMICONDUCTORS
SENSITIVITY
Shape
SILICON
Transient response
TRANSIENTS
USES
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Beschreibung
Zusammenfassung:An apparatus previously developed and used for determination of scintillator response characteristics has been used for similar studies of the transient response of semiconductor nuclear detectors. With this apparatus a detector pulse as short as 1.2 nsec has been observed. Pulses have been recorded for diffused junction and lithium-drift diodes, in silicon. The effects of depletion-depth, base resistance and electric filed intensity in the depletion region are revealed in the shape of the pulse. The experimental method and the application of the apparatus to measurement of detector properties is discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1964.4323433