Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

Millimeter-Wave Amplifier-Based Noise Sources in SiGe BiCMOS Technology

This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2021-11, Vol.69 (11), p.4689-4696
Hauptverfasser: Forsten, Henrik, Saijets, Jan H., Kantanen, Mikko, Varonen, Mikko, Kaynak, Mehmet, Piironen, Petri
Format: Artikel
Sprache:eng
Schlagworte:
Amplifiers
Bandwidth
Broadband
Couplers
Impedance matching
Matching
Millimeter waves
Millimeter-wave
Noise control
noise sources
Scattering parameters
SiGe
Silicon germanides
Silicon germanium
Temperature measurement
Wideband
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Zusammenfassung:This article describes the development and characterization of wideband millimeter-wave noise sources based on SiGe BiCMOS amplifiers. Two single-ended three-stage amplifier-based noise sources reached excess noise ratio (ENR) values over 20 dB from 120 to 220 GHz with 20 mA of the bias current from a 2.3-V supply. We also introduce a novel switchable noise source employing the Lange coupler for providing wideband matching in both ON and OFF configurations of the noise source. The Lange coupler-based noise source has better than 12-dB matching from 90 to 270 GHz with an ENR of better than 15 dB from 125 to 235 GHz.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2021.3104028