A High-Efficiency 27-30-GHz 130-nm Bi-CMOS Transmitter Front End for SATCOM Phased Arrays
A high-efficiency 27-30 GHz 0.13- {{\mu } \text {m}} BiCMOS transmitter front end for mobile satellite communication (SATCOM) phased arrays is presented. A system-level analysis for determining the key parameters of the RF front end for the case of a SATCOM user terminal for geostationary Earth orb...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2021-11, Vol.69 (11), p.4977-4985 |
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Sprache: | eng |
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Zusammenfassung: | A high-efficiency 27-30 GHz 0.13- {{\mu } \text {m}} BiCMOS transmitter front end for mobile satellite communication (SATCOM) phased arrays is presented. A system-level analysis for determining the key parameters of the RF front end for the case of a SATCOM user terminal for geostationary Earth orbit (GEO) is presented. The building blocks of the beamformer, consisting of a phase shifter, variable attenuator, and power amplifier, are fully characterized. A 360° phase shifter with an accuracy of 7 bits and amplitude error of ±1.5 dB is integrated with a variable attenuator that provides a gain variation of 16 dB with phase error of ±5°. The chip has a measured transducer gain of 23 dB and a power consumption of 45 mW at OP 1dB of 10.8 dBm. The power-added efficiency (PAE) of 26.7% is measured for the entire channel at OP 1dB . An error vector magnitude (EVM) of −28 dB at P out,avg of 6 dBm and PAE avg of 12% is measured for a 400-MHz bandwidth 64-QAM modulated signal. The overall size of the chip is {1.18} \times {2.23}\,\,\text {mm}^{{2}} . |
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ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/TMTT.2021.3103975 |