A Novel Low-Power Notch-Enhanced Active Filter for Ultrawideband Interferer Rejected LNA

In this article, a novel low-power notch-enhanced active filter is presented using the feedback notch-enhanced (FNE) technique. The active notch filter is proposed based on an area-saving second-order LC series resonator. The passive devices' loss can be effectively eliminated by the generated dc power-independent negative resistance by inserting a current feedback transistor. Moreover, the capacitive source degeneration (CSD) technique is proposed to boost the filter Q by shifting the series resonant frequency to the negative-resistance region. To demonstrate the feasibility and practicability of the proposed notch filter, a 3.1-10.6-GHz IEEE 802.11a interferer rejected low-noise amplifier (IR-LNA) is fabricated in a 0.13- \mu {\hbox {m}} CMOS process. The multistage structure, consisting of a common-gate (CG) stage with a dual-resonance load and a cascode stage with the proposed active notch filter, is employed for wideband input matching, gain flatness, and interferer rejection (IR) simultaneously. The measurements show that the IR-LNA provides a maximum of 16.05-dB power gain, 2.08-3.70-dB noise figure (NF) in the desired band, and a maximum of 40.9-dB IR ratio (IRR) at 5.77 GHz, with a power consumption of 10.2 mW, while the active notch filter only consumes 456- \mu {\hbox {A}} current.