Low-Input Power-Level CMOS RF Energy-Harvesting Front End

RF energy-harvesting front ends consist of LC matching networks and RF rectifiers. The minimum detectable power (sensitivity) is dependent on the losses of both parts. In this paper, RF energy-harvesting sensitivity limits at steady state and design tradeoffs for matching networks and rectifiers are...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2015-11, Vol.63 (11), p.3794-3805
Hauptverfasser: Abouzied, Mohamed A., Sanchez-Sinencio, Edgar
Format: Artikel
Sprache:eng
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Zusammenfassung:RF energy-harvesting front ends consist of LC matching networks and RF rectifiers. The minimum detectable power (sensitivity) is dependent on the losses of both parts. In this paper, RF energy-harvesting sensitivity limits at steady state and design tradeoffs for matching networks and rectifiers are introduced. These limits and tradeoffs are examined for standard CMOS 0.18-μm technology. Two designs, one with off-chip matching network and the other with on-chip matching network, are presented, compared, and measured for an output voltage of 1 V. The sensitivity of the off-chip design is -27.3 dBm while taking 180 × 90 μm 2 die area and off-chip high quality inductor and capacitor, which takes an extra 7.28 mm 2 printed circuit board area. The fully integrated on-chip design has a sensitivity of -21.7 dBm while taking 820 × 450 μm 2 die area. The sensitivity of the former proved superior while the latter is more attractive in terms of compactness, low cost, and easier tunability.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2015.2479233