Control of IMD Asymmetry of CMOS Power Amplifier for Broadband Operation Using Wideband Signal

A fully integrated linear CMOS power amplifier (PA) for the broadband operation is developed for handset applications. This amplifier can handle a wideband signal. To achieve broadband/wideband operation, an analysis of the intermodulation distortion for the asymmetric source in a differential casco...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2013-10, Vol.61 (10), p.3753-3762
Hauptverfasser:	Jin, Sangsu, Kwon, Myeongju, Moon, Kyunghoon, Park, Byungjoon, Kim, Bumman
Format:	Artikel
Sprache:	eng
Schlagworte:	Adjacent channel leakage ratio (ACLR) Amplifiers Amplitude modulation Applied sciences broadband Broadband communication cascode Circuit properties CMOS class-AB CMOS integrated circuits common gate (CG) Design. Technologies. Operation analysis. Testing differential Electric, optical and optoelectronic circuits Electronic circuits Electronics Equipments and installations Exact sciences and technology Harmonic analysis Impedance Integrated circuits intermodulation distortion (IMD) linear amplifier linearity linearization Logic gates long-term evolution (LTE) memory effect Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Mobile radiocommunication systems power amplifier (PA) Radiocommunications Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Telecommunications Telecommunications and information theory third-order intermodulation distortion (IMD3) asymmetry transmission-line transformer (TLT) Wideband
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