Control of IMD Asymmetry of CMOS Power Amplifier for Broadband Operation Using Wideband Signal
A fully integrated linear CMOS power amplifier (PA) for the broadband operation is developed for handset applications. This amplifier can handle a wideband signal. To achieve broadband/wideband operation, an analysis of the intermodulation distortion for the asymmetric source in a differential casco...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2013-10, Vol.61 (10), p.3753-3762 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Jin, Sangsu Kwon, Myeongju Moon, Kyunghoon Park, Byungjoon Kim, Bumman |
| description | A fully integrated linear CMOS power amplifier (PA) for the broadband operation is developed for handset applications. This amplifier can handle a wideband signal. To achieve broadband/wideband operation, an analysis of the intermodulation distortion for the asymmetric source in a differential cascode structure is presented. Based on the analysis, the linearization technique using a second harmonic circuit at the gate of the common gate is proposed to reduce the asymmetry. The proposed PA with an on-chip transmission-line transformer, which has a broadband matching characteristic, is fabricated using a 0.18-μm RF CMOS technology. The measurement results show that the sideband asymmetry is less than 0.6 dB for a signal with up to 50-MHz bandwidth, and the peak average power is improved by 1.2 dB within the linearity spec of a 16-QAM 7.5-dB peak-to-average power ratio long-term evolution signal. The PA delivers a power-added efficiency of 36.5%-31.2% and an average output power of 27.5-27.1 dBm under an ACLR E-UTRA of -30.5 dBc for a 50-MHz bandwidth signal across 1.4-2.0-GHz carrier frequency. |
| doi_str_mv | 10.1109/TMTT.2013.2280116 |
| format | Article |
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This amplifier can handle a wideband signal. To achieve broadband/wideband operation, an analysis of the intermodulation distortion for the asymmetric source in a differential cascode structure is presented. Based on the analysis, the linearization technique using a second harmonic circuit at the gate of the common gate is proposed to reduce the asymmetry. The proposed PA with an on-chip transmission-line transformer, which has a broadband matching characteristic, is fabricated using a 0.18-μm RF CMOS technology. The measurement results show that the sideband asymmetry is less than 0.6 dB for a signal with up to 50-MHz bandwidth, and the peak average power is improved by 1.2 dB within the linearity spec of a 16-QAM 7.5-dB peak-to-average power ratio long-term evolution signal. The PA delivers a power-added efficiency of 36.5%-31.2% and an average output power of 27.5-27.1 dBm under an ACLR E-UTRA of -30.5 dBc for a 50-MHz bandwidth signal across 1.4-2.0-GHz carrier frequency.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2013.2280116</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Adjacent channel leakage ratio (ACLR) ; Amplifiers ; Amplitude modulation ; Applied sciences ; broadband ; Broadband communication ; cascode ; Circuit properties ; CMOS class-AB ; CMOS integrated circuits ; common gate (CG) ; Design. Technologies. Operation analysis. Testing ; differential ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Equipments and installations ; Exact sciences and technology ; Harmonic analysis ; Impedance ; Integrated circuits ; intermodulation distortion (IMD) ; linear amplifier ; linearity ; linearization ; Logic gates ; long-term evolution (LTE) ; memory effect ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Mobile radiocommunication systems ; power amplifier (PA) ; Radiocommunications ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Telecommunications ; Telecommunications and information theory ; third-order intermodulation distortion (IMD3) asymmetry ; transmission-line transformer (TLT) ; Wideband</subject><ispartof>IEEE transactions on microwave theory and techniques, 2013-10, Vol.61 (10), p.3753-3762</ispartof><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c295t-fa7fde5907797436391b71776e2861c1231b19da136f92b803a7b3d979dd6dde3</citedby><cites>FETCH-LOGICAL-c295t-fa7fde5907797436391b71776e2861c1231b19da136f92b803a7b3d979dd6dde3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6595645$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6595645$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27896010$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jin, Sangsu</creatorcontrib><creatorcontrib>Kwon, Myeongju</creatorcontrib><creatorcontrib>Moon, Kyunghoon</creatorcontrib><creatorcontrib>Park, Byungjoon</creatorcontrib><creatorcontrib>Kim, Bumman</creatorcontrib><title>Control of IMD Asymmetry of CMOS Power Amplifier for Broadband Operation Using Wideband Signal</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>A fully integrated linear CMOS power amplifier (PA) for the broadband operation is developed for handset applications. This amplifier can handle a wideband signal. To achieve broadband/wideband operation, an analysis of the intermodulation distortion for the asymmetric source in a differential cascode structure is presented. Based on the analysis, the linearization technique using a second harmonic circuit at the gate of the common gate is proposed to reduce the asymmetry. The proposed PA with an on-chip transmission-line transformer, which has a broadband matching characteristic, is fabricated using a 0.18-μm RF CMOS technology. The measurement results show that the sideband asymmetry is less than 0.6 dB for a signal with up to 50-MHz bandwidth, and the peak average power is improved by 1.2 dB within the linearity spec of a 16-QAM 7.5-dB peak-to-average power ratio long-term evolution signal. The PA delivers a power-added efficiency of 36.5%-31.2% and an average output power of 27.5-27.1 dBm under an ACLR E-UTRA of -30.5 dBc for a 50-MHz bandwidth signal across 1.4-2.0-GHz carrier frequency.</description><subject>Adjacent channel leakage ratio (ACLR)</subject><subject>Amplifiers</subject><subject>Amplitude modulation</subject><subject>Applied sciences</subject><subject>broadband</subject><subject>Broadband communication</subject><subject>cascode</subject><subject>Circuit properties</subject><subject>CMOS class-AB</subject><subject>CMOS integrated circuits</subject><subject>common gate (CG)</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>differential</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Equipments and installations</subject><subject>Exact sciences and technology</subject><subject>Harmonic analysis</subject><subject>Impedance</subject><subject>Integrated circuits</subject><subject>intermodulation distortion (IMD)</subject><subject>linear amplifier</subject><subject>linearity</subject><subject>linearization</subject><subject>Logic gates</subject><subject>long-term evolution (LTE)</subject><subject>memory effect</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Mobile radiocommunication systems</subject><subject>power amplifier (PA)</subject><subject>Radiocommunications</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>third-order intermodulation distortion (IMD3) asymmetry</subject><subject>transmission-line transformer (TLT)</subject><subject>Wideband</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LwzAYx4MoOKcfQLzk4rEzT9ImzXHWt8HGhHV4s6RNMiJ9IxnIvr2tGzs9L_-Xww-heyAzACKf8lWezygBNqM0JQD8Ak0gSUQkuSCXaEIIpJGMU3KNbkL4Gc44IekEfWddu_ddjTuLF6sXPA-HpjF7fxgf2Wq9wZ_dr_F43vS1s27YbOfxs--ULlWr8bo3Xu1d1-JtcO0Ofzlt_oWN27WqvkVXVtXB3J3mFG3fXvPsI1qu3xfZfBlVVCb7yCphtUkkEUKKmHEmoRQgBDc05VABZVCC1AoYt5KWKWFKlExLIbXmWhs2RXDsrXwXgje26L1rlD8UQIoRUDECKkZAxQnQkHk8ZnoVKlVbr9rKhXOQilRyAmTwPRx9zhhzlnkiEx4n7A8wsm31</recordid><startdate>20131001</startdate><enddate>20131001</enddate><creator>Jin, Sangsu</creator><creator>Kwon, Myeongju</creator><creator>Moon, Kyunghoon</creator><creator>Park, Byungjoon</creator><creator>Kim, Bumman</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20131001</creationdate><title>Control of IMD Asymmetry of CMOS Power Amplifier for Broadband Operation Using Wideband Signal</title><author>Jin, Sangsu ; Kwon, Myeongju ; Moon, Kyunghoon ; Park, Byungjoon ; Kim, Bumman</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c295t-fa7fde5907797436391b71776e2861c1231b19da136f92b803a7b3d979dd6dde3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Adjacent channel leakage ratio (ACLR)</topic><topic>Amplifiers</topic><topic>Amplitude modulation</topic><topic>Applied sciences</topic><topic>broadband</topic><topic>Broadband communication</topic><topic>cascode</topic><topic>Circuit properties</topic><topic>CMOS class-AB</topic><topic>CMOS integrated circuits</topic><topic>common gate (CG)</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>differential</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Equipments and installations</topic><topic>Exact sciences and technology</topic><topic>Harmonic analysis</topic><topic>Impedance</topic><topic>Integrated circuits</topic><topic>intermodulation distortion (IMD)</topic><topic>linear amplifier</topic><topic>linearity</topic><topic>linearization</topic><topic>Logic gates</topic><topic>long-term evolution (LTE)</topic><topic>memory effect</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Mobile radiocommunication systems</topic><topic>power amplifier (PA)</topic><topic>Radiocommunications</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Telecommunications</topic><topic>Telecommunications and information theory</topic><topic>third-order intermodulation distortion (IMD3) asymmetry</topic><topic>transmission-line transformer (TLT)</topic><topic>Wideband</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jin, Sangsu</creatorcontrib><creatorcontrib>Kwon, Myeongju</creatorcontrib><creatorcontrib>Moon, Kyunghoon</creatorcontrib><creatorcontrib>Park, Byungjoon</creatorcontrib><creatorcontrib>Kim, Bumman</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jin, Sangsu</au><au>Kwon, Myeongju</au><au>Moon, Kyunghoon</au><au>Park, Byungjoon</au><au>Kim, Bumman</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Control of IMD Asymmetry of CMOS Power Amplifier for Broadband Operation Using Wideband Signal</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2013-10-01</date><risdate>2013</risdate><volume>61</volume><issue>10</issue><spage>3753</spage><epage>3762</epage><pages>3753-3762</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A fully integrated linear CMOS power amplifier (PA) for the broadband operation is developed for handset applications. This amplifier can handle a wideband signal. To achieve broadband/wideband operation, an analysis of the intermodulation distortion for the asymmetric source in a differential cascode structure is presented. Based on the analysis, the linearization technique using a second harmonic circuit at the gate of the common gate is proposed to reduce the asymmetry. The proposed PA with an on-chip transmission-line transformer, which has a broadband matching characteristic, is fabricated using a 0.18-μm RF CMOS technology. The measurement results show that the sideband asymmetry is less than 0.6 dB for a signal with up to 50-MHz bandwidth, and the peak average power is improved by 1.2 dB within the linearity spec of a 16-QAM 7.5-dB peak-to-average power ratio long-term evolution signal. The PA delivers a power-added efficiency of 36.5%-31.2% and an average output power of 27.5-27.1 dBm under an ACLR E-UTRA of -30.5 dBc for a 50-MHz bandwidth signal across 1.4-2.0-GHz carrier frequency.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2013.2280116</doi><tpages>10</tpages></addata></record> |
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| subjects | Adjacent channel leakage ratio (ACLR) Amplifiers Amplitude modulation Applied sciences broadband Broadband communication cascode Circuit properties CMOS class-AB CMOS integrated circuits common gate (CG) Design. Technologies. Operation analysis. Testing differential Electric, optical and optoelectronic circuits Electronic circuits Electronics Equipments and installations Exact sciences and technology Harmonic analysis Impedance Integrated circuits intermodulation distortion (IMD) linear amplifier linearity linearization Logic gates long-term evolution (LTE) memory effect Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Mobile radiocommunication systems power amplifier (PA) Radiocommunications Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Telecommunications Telecommunications and information theory third-order intermodulation distortion (IMD3) asymmetry transmission-line transformer (TLT) Wideband |
| title | Control of IMD Asymmetry of CMOS Power Amplifier for Broadband Operation Using Wideband Signal |
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