Backgate Modulation Technique for Higher Efficiency Envelope Tracking

A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal-semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and outpu...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2013-04, Vol.61 (4), p.1599-1607
Hauptverfasser:	Ghajar, M. R., Wilk, S. J., Lepkowski, W., Bakkaloglu, B., Thornton, T. J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Backgate bias Circuit properties Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics envelope tracking Exact sciences and technology Logic gates MESFETs Modulation Radio frequency Radiocommunications silicon-on-insulator (SOI) MESFET Telecommunications Telecommunications and information theory Threshold voltage Transmitters Transmitters. Receivers Voltage measurement
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Beschreibung
Zusammenfassung:	A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal-semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range modulation of PA gain. Measured results at 1.8 GHz demonstrate 16% power-added efficiency improvement at 6-dB backed-off output power, compared with the same RF PA without backgate modulation.
ISSN:	0018-9480 1557-9670
DOI:	10.1109/TMTT.2013.2247616