A WLAN RF CMOS PA With Large-Signal MGTR Method

A CMOS linear power amplifier for wireless local area network IEEE 802.11b/g application is presented. To achieve high linear output power and high efficiency, a large-signal multigated transistor linearization method is proposed with an envelope injection gate bias circuit. A novel inter-stage matc...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2013-03, Vol.61 (3), p.1272-1279
Hauptverfasser: JOO, Taehwan, KOO, Bonhoon, HONG, Songcheol
Format: Artikel
Sprache:eng
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Zusammenfassung:A CMOS linear power amplifier for wireless local area network IEEE 802.11b/g application is presented. To achieve high linear output power and high efficiency, a large-signal multigated transistor linearization method is proposed with an envelope injection gate bias circuit. A novel inter-stage matching transformer, which functions as a power splitter, is designed to implement this method. It is fabricated with a TSMC 0.13-μm standard RF CMOS process. Measurement shows 19.5-dBm P out with 24.8% power-added efficiency (PAE) at - 25-dB error vector magnitude with an orthogonal frequency-division multiplexing 64-QAM 54-Mb/s 802.11g signal source and 23.15-dBm P out with 31.73% PAE with DSSS, CCK, and 11-Mb/s 802.11b signal source without digital pre-distortion.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2013.2244228