An Si-SiGe BiCMOS direct-conversion mixer with second-order and third-order nonlinearity cancellation for WCDMA applications

An Si-SiGe BiCMOS direct-conversion mixer with second-order and third-order nonlinearity cancellation for WCDMA applications

This paper presents a general analysis of the third-order nonlinearity of a differential common-emitter RF amplifier and an improved technique to cancel the third-order nonlinearity. A thorough analysis of the mechanisms leading to the second-order nonlinearity of bipolar double-balanced active mixe...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2003-11, Vol.51 (11), p.2211-2220
Hauptverfasser: Liwei Sheng, Larson, L.E.
Format: Artikel
Sprache:eng
Schlagworte:
Acoustic distortion
Amplifiers
Analog integrated circuits
BiCMOS integrated circuits
Cancellation
Gain
Linearity
Microwaves
Mixers
Multiaccess communication
Noise
Nonlinear distortion
Nonlinearity
Radio frequency
Silicon germanides
Surface acoustic waves
Wireless communication
Wireless LAN
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Zusammenfassung:This paper presents a general analysis of the third-order nonlinearity of a differential common-emitter RF amplifier and an improved technique to cancel the third-order nonlinearity. A thorough analysis of the mechanisms leading to the second-order nonlinearity of bipolar double-balanced active mixers is also presented. An SiGe BiCMOS WCDMA direct-conversion mixer is designed based on the third- and the second-order cancellation schemes. The mixer achieves +6-dBm third-order input intercept point, +49-dBm second-order input intercept point, 16-dB gain and 7.2-dB double-sideband noise figure with only 2.2-mA current at 2.1 GHz.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2003.818586