Hybrid Fin-Line Matching Structures

Hybrid Fin-Line Matching Structures

Two transitions between unilateral and bilateral fin-line mounted back to back show unique features for impedance transformation. The series reactance of the equivalent T-circuit are theoretically shown to be capacitive. This is exploited by designing a broad-band switch with two p-i-n diodes. Its i...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1982-12, Vol.30 (12), p.2132-2139
Hauptverfasser: El Hennawy, H., Schonemann, K.
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
Finline
Impedance
Magnetic fields
Modal analysis
P-i-n diodes
Semiconductor devices
Strips
Switches
Waveguide junctions
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Beschreibung
Zusammenfassung:Two transitions between unilateral and bilateral fin-line mounted back to back show unique features for impedance transformation. The series reactance of the equivalent T-circuit are theoretically shown to be capacitive. This is exploited by designing a broad-band switch with two p-i-n diodes. Its isolation is about 20 dB throughout the Ku-band.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1982.1131396