High-Power Pulsed UHF and L Band p+-n-n+ Silicon TRAPATT Diode Lasers

High-Power Pulsed UHF and L Band p+-n-n+ Silicon TRAPATT Diode Lasers

The design and performance of both the lumped-element TRAPATT oscillator circuit and deep-diffused p+-n-n+ silicon TRAPATT diodes designed primarily for pulsed RADAR applications in the UHF and L band frequency ranges are discussed. Circuit conditions for optimum performance are described. Methods o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on microwave theory and techniques 1975-12, Vol.23 (12), p.959-970
Hauptverfasser: Obah, C.O.G., Benko, E., Bowers, H.C., Midford, T.A., Regier, R.D.
Format: Artikel
Sprache:eng
Schlagworte:
Diode lasers
Jitter
Optical pulses
Optimization methods
Oscillators
Pulse circuits
Radar applications
Radio frequency
Silicon
UHF circuits
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The design and performance of both the lumped-element TRAPATT oscillator circuit and deep-diffused p+-n-n+ silicon TRAPATT diodes designed primarily for pulsed RADAR applications in the UHF and L band frequency ranges are discussed. Circuit conditions for optimum performance are described. Methods of optimizing diodes are presented. Diode performance capability is shown to depend on the relative position of the junction in the device depletion region. Peak powers close to 900 W and maximum conversion efficiencies of 40 percent have been achieved from diodes with large p-region width to total depletion region width ratios. RF leading-edge jitter of less than 1 ns has been obtained under optimum circuit and diode operating conditions.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1975.1128728