Equivalent Circuit of the Schottky-Barrier Field-Effect Transistor at Microwave Frequencies (Short Papers)

Equivalent Circuit of the Schottky-Barrier Field-Effect Transistor at Microwave Frequencies (Short Papers)

Johnson's high-frequency representation theory for MOSFET's, experimentally confirmed by Hopkins up to 1 GHz, is extended in this short paper for SBFET's and is found to substantially agree with data for 1-mu m- and 1/2-mu m-gate GaAs SBFET's up to 12 GHz. Regenerative-feedback c...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1975-06, Vol.23 (6), p.499-501
1. Verfasser: Dawson, R.H.
Format: Artikel
Sprache:eng
Schlagworte:
Admittance
Capacitors
Contact resistance
Equivalent circuits
FETs
Microwave frequencies
Microwave transistors
MOSFET circuits
Negative feedback
Parasitic capacitance
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Zusammenfassung:Johnson's high-frequency representation theory for MOSFET's, experimentally confirmed by Hopkins up to 1 GHz, is extended in this short paper for SBFET's and is found to substantially agree with data for 1-mu m- and 1/2-mu m-gate GaAs SBFET's up to 12 GHz. Regenerative-feedback conductance not accounted for by conventional models is seen to be present in SBFET's at microwave frequencies.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1975.1128607