The behavior of pinned layers using a high-field transfer curve
In order to study the magnetic behaviors of pinned layers under different conditions, we applied compressive mechanical stress to a device and measured the transfer curve changes using a high-field (10 kOe) quasi-static tester. This permitted us to determine the behaviors of the pinned layers and th...
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| Veröffentlicht in: | IEEE transactions on magnetics 2005-10, Vol.41 (10), p.2950-2952 |
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| container_title | IEEE transactions on magnetics |
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| creator | Sangmun Oh Nishioka, K. Umezaki, H. Tanaka, H. Seki, T. Sasaki, S. Ohtsu, T. Kataoka, K. Furusawa, K. |
| description | In order to study the magnetic behaviors of pinned layers under different conditions, we applied compressive mechanical stress to a device and measured the transfer curve changes using a high-field (10 kOe) quasi-static tester. This permitted us to determine the behaviors of the pinned layers and the free layer. The results of the transfer curve measurements led to a classification of these curves. The governing conditions for each category were also determined. A normal transfer curve occurs when "E/sub j/>E/sub u//spl Gt/E/sub k/(AP1) and E/sub k/(AP2)," where: AP1 is the pinned layer adjacent to the antiferromagnetic (AFM) layer; AP2 is the pinned layer adjacent to the spacer; E/sub u/ is the coupling energy constant between the antiferromagnetic layer and the AP1; E/sub j/ is the anti-parallel coupling energy constant between AP1 and AP2 through the Ru; and E/sub k/(AP1) and E/sub k/(AP2) are the induced uniaxial anisotropic energy constants in AP1 and AP2 due to magnetostriction resulting from stress applied giant magnetoresistive (GMR) sensor. |
| doi_str_mv | 10.1109/TMAG.2005.855323 |
| format | Article |
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This permitted us to determine the behaviors of the pinned layers and the free layer. The results of the transfer curve measurements led to a classification of these curves. The governing conditions for each category were also determined. A normal transfer curve occurs when "E/sub j/>E/sub u//spl Gt/E/sub k/(AP1) and E/sub k/(AP2)," where: AP1 is the pinned layer adjacent to the antiferromagnetic (AFM) layer; AP2 is the pinned layer adjacent to the spacer; E/sub u/ is the coupling energy constant between the antiferromagnetic layer and the AP1; E/sub j/ is the anti-parallel coupling energy constant between AP1 and AP2 through the Ru; and E/sub k/(AP1) and E/sub k/(AP2) are the induced uniaxial anisotropic energy constants in AP1 and AP2 due to magnetostriction resulting from stress applied giant magnetoresistive (GMR) sensor.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2005.855323</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Anisotropic energy ; Anisotropic magnetoresistance ; antiferromagnet ; Antiferromagnetic materials ; Behavior ; Couplings ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Giant magnetoresistance ; giant magnetoresistive (GMR) ; high-field transfer curve ; Magnetic anisotropy ; Magnetic devices ; Magnetism ; Magnetostriction ; Magnetostrictive devices ; Materials science ; Other topics in materials science ; Perpendicular magnetic anisotropy ; Physics ; pinned layers ; quasi-static tester ; Stress</subject><ispartof>IEEE transactions on magnetics, 2005-10, Vol.41 (10), p.2950-2952</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c417t-9bc37529729107a79945b37264db51274edb2f5b8ee8fe1dd856abb4ac78bc8a3</citedby><cites>FETCH-LOGICAL-c417t-9bc37529729107a79945b37264db51274edb2f5b8ee8fe1dd856abb4ac78bc8a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1519170$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23911,23912,25120,27903,27904,54735</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1519170$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17230935$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sangmun Oh</creatorcontrib><creatorcontrib>Nishioka, K.</creatorcontrib><creatorcontrib>Umezaki, H.</creatorcontrib><creatorcontrib>Tanaka, H.</creatorcontrib><creatorcontrib>Seki, T.</creatorcontrib><creatorcontrib>Sasaki, S.</creatorcontrib><creatorcontrib>Ohtsu, T.</creatorcontrib><creatorcontrib>Kataoka, K.</creatorcontrib><creatorcontrib>Furusawa, K.</creatorcontrib><title>The behavior of pinned layers using a high-field transfer curve</title><title>IEEE transactions on magnetics</title><addtitle>TMAG</addtitle><description>In order to study the magnetic behaviors of pinned layers under different conditions, we applied compressive mechanical stress to a device and measured the transfer curve changes using a high-field (10 kOe) quasi-static tester. This permitted us to determine the behaviors of the pinned layers and the free layer. The results of the transfer curve measurements led to a classification of these curves. The governing conditions for each category were also determined. A normal transfer curve occurs when "E/sub j/>E/sub u//spl Gt/E/sub k/(AP1) and E/sub k/(AP2)," where: AP1 is the pinned layer adjacent to the antiferromagnetic (AFM) layer; AP2 is the pinned layer adjacent to the spacer; E/sub u/ is the coupling energy constant between the antiferromagnetic layer and the AP1; E/sub j/ is the anti-parallel coupling energy constant between AP1 and AP2 through the Ru; and E/sub k/(AP1) and E/sub k/(AP2) are the induced uniaxial anisotropic energy constants in AP1 and AP2 due to magnetostriction resulting from stress applied giant magnetoresistive (GMR) sensor.</description><subject>Anisotropic energy</subject><subject>Anisotropic magnetoresistance</subject><subject>antiferromagnet</subject><subject>Antiferromagnetic materials</subject><subject>Behavior</subject><subject>Couplings</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Giant magnetoresistance</subject><subject>giant magnetoresistive (GMR)</subject><subject>high-field transfer curve</subject><subject>Magnetic anisotropy</subject><subject>Magnetic devices</subject><subject>Magnetism</subject><subject>Magnetostriction</subject><subject>Magnetostrictive devices</subject><subject>Materials science</subject><subject>Other topics in materials science</subject><subject>Perpendicular magnetic anisotropy</subject><subject>Physics</subject><subject>pinned layers</subject><subject>quasi-static tester</subject><subject>Stress</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1LAzEQhoMoWD_ugpcg6G3rJJtskpMU8QsUL_Uckuxsm7Lu1qQr-O_d0oLgaRjmeV-Gh5ALBlPGwNzO32ZPUw4gp1rKkpcHZMKMYAVAZQ7JBIDpwohKHJOTnFfjKiSDCbmbL5F6XLrv2CfaN3Qduw5r2rofTJkOOXYL6ugyLpZFE7Gt6Sa5LjeYaBjSN56Ro8a1Gc_385R8PD7M75-L1_enl_vZaxEEU5vC-FAqyY3ihoFyyhghfal4JWovGVcCa88b6TWibpDVtZaV8164oLQP2pWn5GbXu07914B5Yz9jDti2rsN-yJZrxrg0ZgSv_oGrfkjd-JvVlRIVAKgRgh0UUp9zwsauU_x06ccysFuddqvTbnXanc4xcr3vdTm4thkthJj_coqXYEo5cpc7LiLi31kywxSUv4r5fGA</recordid><startdate>20051001</startdate><enddate>20051001</enddate><creator>Sangmun Oh</creator><creator>Nishioka, K.</creator><creator>Umezaki, H.</creator><creator>Tanaka, H.</creator><creator>Seki, T.</creator><creator>Sasaki, S.</creator><creator>Ohtsu, T.</creator><creator>Kataoka, K.</creator><creator>Furusawa, K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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This permitted us to determine the behaviors of the pinned layers and the free layer. The results of the transfer curve measurements led to a classification of these curves. The governing conditions for each category were also determined. A normal transfer curve occurs when "E/sub j/>E/sub u//spl Gt/E/sub k/(AP1) and E/sub k/(AP2)," where: AP1 is the pinned layer adjacent to the antiferromagnetic (AFM) layer; AP2 is the pinned layer adjacent to the spacer; E/sub u/ is the coupling energy constant between the antiferromagnetic layer and the AP1; E/sub j/ is the anti-parallel coupling energy constant between AP1 and AP2 through the Ru; and E/sub k/(AP1) and E/sub k/(AP2) are the induced uniaxial anisotropic energy constants in AP1 and AP2 due to magnetostriction resulting from stress applied giant magnetoresistive (GMR) sensor.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMAG.2005.855323</doi><tpages>3</tpages></addata></record> |
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| subjects | Anisotropic energy Anisotropic magnetoresistance antiferromagnet Antiferromagnetic materials Behavior Couplings Cross-disciplinary physics: materials science rheology Exact sciences and technology Giant magnetoresistance giant magnetoresistive (GMR) high-field transfer curve Magnetic anisotropy Magnetic devices Magnetism Magnetostriction Magnetostrictive devices Materials science Other topics in materials science Perpendicular magnetic anisotropy Physics pinned layers quasi-static tester Stress |
| title | The behavior of pinned layers using a high-field transfer curve |
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