The behavior of pinned layers using a high-field transfer curve

In order to study the magnetic behaviors of pinned layers under different conditions, we applied compressive mechanical stress to a device and measured the transfer curve changes using a high-field (10 kOe) quasi-static tester. This permitted us to determine the behaviors of the pinned layers and th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on magnetics 2005-10, Vol.41 (10), p.2950-2952
Hauptverfasser: Sangmun Oh, Nishioka, K., Umezaki, H., Tanaka, H., Seki, T., Sasaki, S., Ohtsu, T., Kataoka, K., Furusawa, K.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In order to study the magnetic behaviors of pinned layers under different conditions, we applied compressive mechanical stress to a device and measured the transfer curve changes using a high-field (10 kOe) quasi-static tester. This permitted us to determine the behaviors of the pinned layers and the free layer. The results of the transfer curve measurements led to a classification of these curves. The governing conditions for each category were also determined. A normal transfer curve occurs when "E/sub j/>E/sub u//spl Gt/E/sub k/(AP1) and E/sub k/(AP2)," where: AP1 is the pinned layer adjacent to the antiferromagnetic (AFM) layer; AP2 is the pinned layer adjacent to the spacer; E/sub u/ is the coupling energy constant between the antiferromagnetic layer and the AP1; E/sub j/ is the anti-parallel coupling energy constant between AP1 and AP2 through the Ru; and E/sub k/(AP1) and E/sub k/(AP2) are the induced uniaxial anisotropic energy constants in AP1 and AP2 due to magnetostriction resulting from stress applied giant magnetoresistive (GMR) sensor.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2005.855323