Spin and orbital moments of ultra-thin Fe films on various semiconductor surfaces

The magnetic moments of ultrathin Fe films on three different III-V semiconductor substrates, namely GaAs, InAs and In/sub 0.2/Ga/sub 0.8/As have been measured with X-ray magnetic circular dichroism at room temperature to assess their relative merits as combinations suitable for next-generation spin...

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Veröffentlicht in:	IEEE transactions on magnetics 2005-10, Vol.41 (10), p.3325-3327
Hauptverfasser:	Claydon, J.S., Daxin Niu, Yongbing Xu, Telling, N.D., Kirkman, I.W., van der Laan, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Extraterrestrial measurements Fe/InGaAs Gallium arsenide III-V semiconductor materials interface magnetism Iron Magnetic anisotropy Magnetic films Magnetic moments Magnetism Materials science Other topics in materials science Perpendicular magnetic anisotropy Physics Semiconductor films spin electronics Substrates ultrathin films
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Beschreibung
Zusammenfassung:	The magnetic moments of ultrathin Fe films on three different III-V semiconductor substrates, namely GaAs, InAs and In/sub 0.2/Ga/sub 0.8/As have been measured with X-ray magnetic circular dichroism at room temperature to assess their relative merits as combinations suitable for next-generation spintronic devices. The results revealed rather similar spin moments and orbital moments for the three systems, suggesting the relationship between film and semiconductor lattice parameters to be less critical to magnetic moments than magnetic anisotropy.
ISSN:	0018-9464 1941-0069
DOI:	10.1109/TMAG.2005.855201