Block oriented bubble domain memory organization

Block oriented bubble domain memory organization

A block oriented bubble domain memory organization is proposed which provides a block access time improvement over existing major/minor loop designs and which exhibits built-in redundancy. Wafer level integration is utilized to reduce the module lead count.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on magnetics 1976-07, Vol.12 (4), p.411-413
Hauptverfasser: George, P., Oeffinger, T., Bohning, O.
Format: Artikel
Sprache:eng
Schlagworte:
Chip scale packaging
Decoding
Detectors
Driver circuits
Read-write memory
Switches
Tracking loops
Writing
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Beschreibung
Zusammenfassung:A block oriented bubble domain memory organization is proposed which provides a block access time improvement over existing major/minor loop designs and which exhibits built-in redundancy. Wafer level integration is utilized to reduce the module lead count.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.1976.1059033