Steady-State and Small-Signal Analysis of High-Voltage Gain Half-Bridge Switched Boost Inverter

In this paper, a new topology for half-bridge switched boost inverter (HB-SBI) is proposed. The proposed half-bridge inverter uses more active elements rather than capacitors and inductors in comparison with the conventional half-bridge Z-source inverter with two Z-networks, which results in reducti...

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Veröffentlicht in:IEEE transactions on industrial electronics (1982) 2016-06, Vol.63 (6), p.3546-3553
Hauptverfasser: Babaei, Ebrahim, Shokati Asl, Elias, Babayi, Mohsen Hasan
Format: Artikel
Sprache:eng
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Zusammenfassung:In this paper, a new topology for half-bridge switched boost inverter (HB-SBI) is proposed. The proposed half-bridge inverter uses more active elements rather than capacitors and inductors in comparison with the conventional half-bridge Z-source inverter with two Z-networks, which results in reduction of weight, size, and cost. Moreover, the proposed inverter has the capability of eliminating inverter leg short-circuit issues and is able to further increase the output voltage level in comparison with its conventional types. Generating zero-level output voltage is also another advantage of this topology. Based on theoretical calculations, the steady-state and small-signal analysis of the proposed topology in different operating modes are performed and the ripple of inductors' current and capacitors' voltage are also calculated. A comprehensive comparison is also made between the proposed inverter and the conventional types. Finally, the experimental results are provided to reconfirm the performance of the proposed inverter.
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2016.2523919