Insights Into the Behavior of Leakage Current and Switching Instability in Lateral β-Ga₂O₃ MOSFETs

We investigate the performance of \beta -Ga2O3 lateral MOSFETs on native \beta -Ga2O3 substrates, featuring Fe ion implantation to address the known presence and the resulting effects of unintentional Si-impurities at the epilayer/substrate interface. A significant instability in threshold voltage...

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Veröffentlicht in:	IEEE transactions on electron devices 2024-12, Vol.71 (12), p.7372-7376
Hauptverfasser:	Chen, Zequan, Smith, Matthew, Higashiwaki, Masataka, Kuball, Martin
Format:	Artikel
Sprache:	eng
Schlagworte:	Buffer layers Current measurement Electrical measurement Electrical resistivity Fe implantation Gallium oxides Hysteresis Impurities Interface stability Ion implantation Iron lateral MOSFETs Lateral stability Leakage current Leakage currents Logic gates MOSFET MOSFETs Si contaminants Silicon Silicon substrates Substrates Temperature dependence Threshold voltage Voltage measurement β-Ga₂O
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