Identical Pulse With Opposite Polarity Assistance Detrapping-Arithmetic Progression (OPAD-AP) to Ideal Potentiation of FeFET for Synapse

A double-HZO ferroelectric FET (FeFET) with near-ideal potentiation linearity ( \alpha _{P} =0.07 ) and applicable conductance ratio ( {G}_{\text {Max}} / {G}_{\min } , \Delta {G} ) >16 was demonstrated by using opposite polarity assistance detrapping (OPAD) stimulation in this study. Double-HZO can provide diverse coercive field for analog FE synaptic operation, and the OPAD scheme helps electron detrapping to avoid trapped charge interference. In addition, the reproducibility of the OPAD has been validated, which is promising for future deep neural network (DNN) circuit design.