TCAD Analysis of Single-Event Burnout Hardness for an Improved CoolSiC Trench MOSFET

A 1200-V rated CoolSiC Trench MOSFET structure has excellent overall electrical characteristics due to its unique asymmetric structure. However, it is sensitive to space heavy ion radiation. In this study, heavy ion irradiation experiments were conducted on 1.2 kV CoolSiC Trench MOSFET devices to calibrate the simulation structure model and critical failure conditions. The 2-D numerical simulator SILVACO TCAD was used to investigate the single event burnout (SEB) hardening method for the 1.2 kV-rated CoolSiC Trench MOSFET under high linear energy transfer (LET) values. The simulation results show that the improved CoolSiC Trench MOSFET structure can effectively enhance the SEB capability of the device without sacrificing its excellent overall electrical characteristics compared to the traditional CoolSiC Trench MOSFET. At 360 V voltage and 0.5 pC/ \mu m LET value, the highest temperature is reduced from 3097 to 1502 K, and the lowest burnout threshold is increased by 200 V in the improved structure while maintaining almost unchanged characteristics at other locations.