Hydrogen-Terminated Diamond Field-Effect Transistors With 10 11 ON/ OFF Ratio Using an Al 2 O 3 /HfO 2 Stacked Passivation Layer

Hydrogen-Terminated Diamond Field-Effect Transistors With 10 11 ON/ OFF Ratio Using an Al 2 O 3 /HfO 2 Stacked Passivation Layer

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Veröffentlicht in:IEEE transactions on electron devices 2024-01, Vol.71 (1), p.940-943
Hauptverfasser: Chen, Zhihao, Yu, Xinxin, Mao, Shuman, Zhou, Jianjun, Kong, Yuechan, Chen, Tangsheng, Xu, Ruimin, Yan, Bo, Xu, Yuehang
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container_title IEEE transactions on electron devices
container_volume 71
creator Chen, Zhihao
Yu, Xinxin
Mao, Shuman
Zhou, Jianjun
Kong, Yuechan
Chen, Tangsheng
Xu, Ruimin
Yan, Bo
Xu, Yuehang
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doi_str_mv 10.1109/TED.2023.3339109
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title Hydrogen-Terminated Diamond Field-Effect Transistors With 10 11 ON/ OFF Ratio Using an Al 2 O 3 /HfO 2 Stacked Passivation Layer
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