Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition
We propose an analytical approach for calculating the time-to-breakdown of metal-oxide-semiconductor (MOS) systems under different stress conditions. Our method relies solely on fresh {I}_{\text {g}} {V}_{\text {g}} measurements, making it easy to implement. Building on the percolation model and i...
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Veröffentlicht in: | IEEE transactions on electron devices 2023-12, Vol.70 (12), p.6512-6519 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We propose an analytical approach for calculating the time-to-breakdown of metal-oxide-semiconductor (MOS) systems under different stress conditions. Our method relies solely on fresh {I}_{\text {g}} {V}_{\text {g}} measurements, making it easy to implement. Building on the percolation model and incorporating experimental trends from the literature, we accurately determine the voltage, gate oxide thickness, and temperature dependencies of time-to-breakdown. These calculated values are compared to experimental data under various operating conditions, allowing for a comprehensive assessment. Consequently, we introduce a time-to-breakdown map in the {Temperature-Voltage} space for immediate identification of the maximum stress condition for any target lifetime. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2023.3326430 |