Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO 2 /Al 2 O 3 Gate Dielectrics

Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO 2 /Al 2 O 3 Gate Dielectrics

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Veröffentlicht in:IEEE transactions on electron devices 2023-10, Vol.70 (10), p.5044-5050
Hauptverfasser: Jiang, Shanshan, He, Gang, Lu, Jinyu, Qiao, Lesheng
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container_title IEEE transactions on electron devices
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He, Gang
Lu, Jinyu
Qiao, Lesheng
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doi_str_mv 10.1109/TED.2023.3305948
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title Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO 2 /Al 2 O 3 Gate Dielectrics
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