An Accurate Model for InP HEMT Small-Signal Equivalent Circuit Based on EM Simulation

A high-reliability small-signal equivalent circuit model for indium-phosphide-based high-electron-mobility transistors (InP-based HEMTs) is proposed. A de-embedding scheme for the representative structure is utilized in this model with an electromagnetic simulation approach to consider the distribut...

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Veröffentlicht in:	IEEE transactions on electron devices 2023-03, Vol.70 (3), p.1-7
Hauptverfasser:	Feng, Zhiyu, Cao, Shurui, Feng, Ruize, Zhou, Fugui, Su, Yongbo, Ding, Wucang, Jin, Zhi
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit reliability Different gate widths electromagnetic (EM) simulation Equivalent circuits Frequency ranges HEMTs High electron mobility transistors III-V semiconductor materials Indium phosphide Indium phosphides indium-phosphide-based high-electron-mobility transistors (InP-based HEMTs) Integrated circuit modeling Logic gates Mathematical models Parameter extraction Parameters Semiconductor devices Simulation small-signal model Topology
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