An Accurate Model for InP HEMT Small-Signal Equivalent Circuit Based on EM Simulation

A high-reliability small-signal equivalent circuit model for indium-phosphide-based high-electron-mobility transistors (InP-based HEMTs) is proposed. A de-embedding scheme for the representative structure is utilized in this model with an electromagnetic simulation approach to consider the distributed extrinsic parasitic elements. The intrinsic part of the small-signal model is directly extracted with the Y-parameter of the intrinsic two-port network. The extraction of the parametric elements was performed under different biases and three different gate widths (2 \times 20 \mu m, 2 \times 30 \mu m, and 2 \times 50 \mu m), our S-parameter predictions showed good agreement with measurements in the 1-50-GHz frequency range. The proposed model performs an electromagnetic simulation of different gate-width devices, considers the devices' distribution and radio-frequency behavior, and avoids errors caused by traditional tests' extraction of parasitic parameters. The proposed model solves the problem that the conventional indium phosphide-based HEMT small-signal model is limited by the device topology, making the high-frequency modeling more accurate.