Electrolithic Memory: A New Device for Ultrahigh-Density Data Storage

We propose a storage memory device that enables bit densities of >1 Tbit/mm 2 based on the electro- deposition and electrodissolution of multilayered metal stacks in deep nanometer-sized wells. This device addresses the challenge of bit density scaling slowdown expected for 3-D NAND flash beyond 2030. We describe in detail the operating principles and discuss the response time, bandwidth, retention, and cycling endurance requirements for the device to be viable. As a proof-of-principle, we provide a first demonstration of the write/read (W/R) mechanism on millimeter- and micrometer-sized electrodes and show the device's potential for reaching very high bit densities. To evaluate how the response time scales for the envisioned nanometer-sized electrodes, we derive simple analytical expressions based on finite element simulations that relate the well depth, radius, and electrolyte composition to the deposition/dissolution rate.