Extending Channel Scaling Limit of p-MOSFETs Through Antimonene With Heavy Effective Mass and High Density of State

Conventional silicon-based transistor downscaling is approaching its physical limits, and thus additional novel solutions are urgently desired to address this issue. Herein, we show that 2-D antimonene with heavy effective mass and high density of state (DOS) via strain engineering presents reliable transistor performance with the channel length ( {L}_{\text {ch}} ) shrinking below 5 nm. As the biaxial tensile strain increases to 7%, the band switching gives rise to a heavy hole effective mass of 12.6{m}_{{0}} and a Van Hoff singularity-like DOS. This unique electronic structure can effectively suppress the tunneling current, resulting in steep subthreshold swings (SSs) and ideal ON-current ( {I}_{ \mathrm{ON}} ). Especially, as {L}_{\text {ch}} downscales to 2.2 nm, the OFF-current can be easily reduced to 0.1 \mu \text{A}/\mu \text{m} with SS of 120 mV/dec (310 mV/dec for pristine antimonene) and {I}_{ \mathrm{ON}} exceeds 900 \mu \text{A}/\mu \text{m} , fulfilling the requirements for high-performance applications. Our results provide new insights on extending the scaling limit in energy-efficient gate-controlled devices.