Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO 2 Insulators

Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO 2 Insulators

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Veröffentlicht in:IEEE transactions on electron devices 2021-11, Vol.68 (11), p.5438-5447
Hauptverfasser: Giuliano, Federico, Reggiani, Susanna, Gnani, Elena, Gnudi, Antonio, Rossetti, Mattia, Depetro, Riccardo, Croce, Giuseppe
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container_end_page 5447
container_issue 11
container_start_page 5438
container_title IEEE transactions on electron devices
container_volume 68
creator Giuliano, Federico
Reggiani, Susanna
Gnani, Elena
Gnudi, Antonio
Rossetti, Mattia
Depetro, Riccardo
Croce, Giuseppe
description
doi_str_mv 10.1109/TED.2021.3100309
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title Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO 2 Insulators
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