Low-Frequency Noise Characteristics Under the OFF-State Stress

Low-Frequency Noise Characteristics Under the OFF-State Stress

Low-frequency noise (LFN) characteristics under OFF-state stress (OSS), which degrade device performance, were investigated in n-channel MOSFETs. The power spectral density (PSD) was analyzed by investigating the LFN and the border traps located in the gate oxide were extracted along a depth directi...

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Veröffentlicht in:IEEE transactions on electron devices 2020-10, Vol.67 (10), p.4366-4371
Hauptverfasser: Lee, Geon-Beom, Kim, Choong-Ki, Yoo, Min-Soo, Choi, Yang-Kyu
Format: Artikel
Sprache:eng
Schlagworte:
Band-to-band tunneling (BTBT)
border trap
Degradation
Impact ionization
LF noise
Logic gates
low-frequencynoise (LFN)
MOSFET
MOSFETs
OFF-state stress (OSS)
Performance degradation
Performance evaluation
Power spectral density
Silicon
Stress
Tunneling
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Beschreibung
Zusammenfassung:Low-frequency noise (LFN) characteristics under OFF-state stress (OSS), which degrade device performance, were investigated in n-channel MOSFETs. The power spectral density (PSD) was analyzed by investigating the LFN and the border traps located in the gate oxide were extracted along a depth direction perpendicular to the silicon (Si) channel surface. The holes generated by band-to-band tunneling (BTBT) in the overlap region between a drain and a gate were found to be more detrimental to device performance than channel hot-carriers created by impact ionization.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.3015445