High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique

A normally-OFF p-GaN gate AlGaN/GaN high-electron-mobility transistor with high ON-state resistance ( {R}_{ \mathrm{\scriptscriptstyle ON}} ) uniformity was realized using a self-terminated digital etching technique. {R}_{ \mathrm{\scriptscriptstyle ON}} uniformity control was improved by simultan...

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Veröffentlicht in:IEEE transactions on electron devices 2018-11, Vol.65 (11), p.4820-4825
Hauptverfasser: Chiu, Hsien-Chin, Chang, Yi-Sheng, Li, Bo-Hong, Wang, Hsiang-Chun, Kao, Hsuan-Ling, Chien, Feng-Tso, Hu, Chih-Wei, Xuan, Rong
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Sprache:eng
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Zusammenfassung:A normally-OFF p-GaN gate AlGaN/GaN high-electron-mobility transistor with high ON-state resistance ( {R}_{ \mathrm{\scriptscriptstyle ON}} ) uniformity was realized using a self-terminated digital etching technique. {R}_{ \mathrm{\scriptscriptstyle ON}} uniformity control was improved by simultaneously using an AlN etching stop layer in an epitaxial design and a novel digital etching procedure. Digital etching includes the multiple-cycle oxidation and the wet etching of p-GaN layers and provides easy control of p-GaN removal depth and surface damage reduction at the gate-to-drain and gate-to-source spacing areas. Low-frequency noise and pulse measurements indicated that device surface traps and current collapse phenomena were suppressed.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2871689