Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In 0.53 Ga 0.47 As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In 0.53 Ga 0.47 As Channel

Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In 0.53 Ga 0.47 As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In 0.53 Ga 0.47 As Channel

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Veröffentlicht in:IEEE transactions on electron devices 2018-05, Vol.65 (5), p.1862-1868
Hauptverfasser: Kim, Seong Kwang, Shim, Jae-Phil, Geum, Dae-Myeong, Kim, Jaewon, Kim, Chang Zoo, Kim, Han-Sung, Song, Jin Dong, Choi, Sung-Jin, Kim, Dae Hwan, Choi, Won Jun, Kim, Hyung-Jun, Kim, Dong Myong, Kim, Sanghyeon
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container_end_page 1868
container_issue 5
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container_title IEEE transactions on electron devices
container_volume 65
creator Kim, Seong Kwang
Shim, Jae-Phil
Geum, Dae-Myeong
Kim, Jaewon
Kim, Chang Zoo
Kim, Han-Sung
Song, Jin Dong
Choi, Sung-Jin
Kim, Dae Hwan
Choi, Won Jun
Kim, Hyung-Jun
Kim, Dong Myong
Kim, Sanghyeon
description
doi_str_mv 10.1109/TED.2018.2810304
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title Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In 0.53 Ga 0.47 As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In 0.53 Ga 0.47 As Channel
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