Multidimensional Nano Heat Conduction in Cylindrical Transistors

A 3-D non-Fourier heat conduction in a cylindrical surrounding-gate (SG) MOSFET including phonon-wall collisions effects has been developed and presented. The obtained results are verified with the existent data. The various thermal characteristics of the device are obtained from the solution of the dual-phase-lag model coupled with a 3-D second-order temperature jump boundary condition. We find that, when the Fourier law ceases to be valid, the presented model is able to predict the nano heat transfer in cylindrical devices. After switching off the device, we show that the temperature is more thermally stable then that given in MOSFET and tri-gate silicon on insulator-MOSFET. We show also that the radius of the cylindrical SG drastically changes the temperature and heat flux distributions within the transistor devices.