Kinetic Velocity Model to Account for Ballistic Effects in the Drift-Diffusion Transport Approach

This paper proposes a novel kinetic velocity model (KVM) for the drift-diffusion (DD) transport approach to describe ballistic effects. It also presents a simulation study of the ballistic effect in short-channel InGaAs and silicon FETs. Monte Carlo and subband Boltzmann transport equation results a...

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Veröffentlicht in:	IEEE transactions on electron devices 2017-11, Vol.64 (11), p.4599-4606
Hauptverfasser:	Penzin, Oleg, Smith, Lee, Erlebach, Axel, Munkang Choi, Ko-Hsin Lee
Format:	Artikel
Sprache:	eng
Schlagworte:	Ballistic mobility Ballistic transport drift diffusion (DD) Fermi–Dirac statistics Indium gallium arsenide InGaAs Kinetic theory kinetic velocity Mathematical model MOSFET Semiconductor device modeling silicon technology computer-aided design (TCAD) thermal velocity
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