Kinetic Velocity Model to Account for Ballistic Effects in the Drift-Diffusion Transport Approach

This paper proposes a novel kinetic velocity model (KVM) for the drift-diffusion (DD) transport approach to describe ballistic effects. It also presents a simulation study of the ballistic effect in short-channel InGaAs and silicon FETs. Monte Carlo and subband Boltzmann transport equation results a...

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Veröffentlicht in:IEEE transactions on electron devices 2017-11, Vol.64 (11), p.4599-4606
Hauptverfasser: Penzin, Oleg, Smith, Lee, Erlebach, Axel, Munkang Choi, Ko-Hsin Lee
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper proposes a novel kinetic velocity model (KVM) for the drift-diffusion (DD) transport approach to describe ballistic effects. It also presents a simulation study of the ballistic effect in short-channel InGaAs and silicon FETs. Monte Carlo and subband Boltzmann transport equation results as well as DD simulations using the simple gate length-dependent ballistic mobility proposed in the literature and the KVM model are compared and discussed. Basic concepts, such as the Matthiessen rule and Fermi-Dirac statistics, are analyzed with a view on ballistic transport in devices in the linear and saturation regimes.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2751968