Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on Si x Ge 1− x and In x Ga 1− x As: Part I—Model Description and Validation

Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on Si x Ge 1− x and In x Ga 1− x As: Part I—Model Description and Validation

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Veröffentlicht in:IEEE transactions on electron devices 2017-09, Vol.64 (9), p.3786-3793
Hauptverfasser: Anwar, Sarkar R. M., Vandenberghe, William G., Bersuker, Gennadi, Veksler, Dmitry, Verzellesi, Giovanni, Morassi, Luca, Galatage, Rohit V., Jha, Sumit, Buie, Creighton, Barton, Adam T., Vogel, Eric M., Hinkle, Christopher L.
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container_issue 9
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container_title IEEE transactions on electron devices
container_volume 64
creator Anwar, Sarkar R. M.
Vandenberghe, William G.
Bersuker, Gennadi
Veksler, Dmitry
Verzellesi, Giovanni
Morassi, Luca
Galatage, Rohit V.
Jha, Sumit
Buie, Creighton
Barton, Adam T.
Vogel, Eric M.
Hinkle, Christopher L.
description
doi_str_mv 10.1109/TED.2017.2725645
format Article
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title Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on Si x Ge 1− x and In x Ga 1− x As: Part I—Model Description and Validation
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